Guidelines for High Bandwidth Memory (HBM) developments by Micron, Samsung, and SK hynix, reaching HBM4 technologies and moving forward.

Guidelines for High Bandwidth Memory (HBM) developments by Micron, Samsung, and SK hynix, reaching HBM4 technologies and moving forward.

The world of high-performance computing is set to take a significant leap forward with the anticipated release of HBM4 (High-Bandwidth Memory, 4th Generation) and HBM4E (High-Bandwidth Memory, 4th Generation Enhanced) in the coming years. Leading memory manufacturers, including Micron, SK hynix, and Samsung, have already begun development and are expected to start mass production of HBM4 by 2026, with HBM4E following close behind in 2027.

Micron Leads the Way with 36GB 12-high HBM4 Samples

Micron has taken the lead in the race to HBM4, having already shipped 36GB 12-high HBM4 samples as of June 2025. The company aims to deliver a bandwidth of over 2.0 TB/s using a proven 1-beta DRAM process. Micron's HBM4 offerings will feature a 2048-bit I/O, doubling the previous interface width, and support 12-high and 16-high stacks.

SK hynix Aims for Advanced Base Dies with HBM4

SK hynix has been shipping HBM4 samples since March 2025 and plans to finalize development in 2025, with mass production scheduled for 2026. The South Korean company is focusing on a 2048-bit wide interface and aims to deliver over 2.0 TB/s per stack using 1b DRAM with advanced base dies like TSMC 3nm.

Samsung Targets Aggressive 1c DRAM Process for HBM4

Samsung is aiming for development completion by the end of 2025, using an aggressive 1c DRAM process. Although the company faces some qualification challenges for 12-high stacks, it is expected to deliver a bandwidth of approximately 2.0 TB/s. Samsung's HBM4 offerings will also feature a 2048-bit I/O.

Differentiating Features Among Manufacturers

Each manufacturer differentiates itself in various aspects, including process technology, interface width, layering options, and innovation scope. For instance, Micron's HBM4 development is based on a proven 1-beta DRAM process, SK hynix is using 1b DRAM with advanced base dies like TSMC 3nm, and Samsung is taking an aggressive approach with its 1c DRAM process.

HBM4E: Pushing Interface Speeds and Adding Enhanced Capabilities

HBM4E is expected to push interface speeds up to around 9 GT/s, adding further flexibility and enhanced capabilities like embedded cache or custom protocols. SK hynix, in particular, has plans for customizable base dies with added functions like enhanced cache and custom interface protocols for HBM4E.

Testing and Qualification Equipment Support Next-Gen HBM Modules

Testing and qualification equipment, like Teradyne's new Magnum 7H launched in 2025, supports the ramp-up for these next-generation HBM modules across all manufacturers.

As we move towards the mass production of HBM4 in 2026, Micron, SK hynix, and Samsung are converging on this technology but differentiate mainly in process node maturity, layering flexibility, and innovation scope within the HBM4 and HBM4E generations.

1. The manufacturing industry, particularly memory manufacturers like Micron, SK hynix, and Samsung, are capitalizing on data-and-cloud-computing demands with the development of next-gen HBM (High-Bandwidth Memory) technologies, such as HBM4 and HBM4E.
2. As finance is a crucial factor in these advancements, competition among these leading memory manufacturers is intense, with each company employing unique technology (like Micron's 1-beta DRAM process, SK hynix's 1b DRAM with advanced base dies, and Samsung's 1c DRAM process) to gain a competitive edge in the high-performance computing market.

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